Semiconductors

JEE Main level, single correct, medium

10 of 209

Question 10 of 209

Consider a situation in which reverse biased current of a particular P−NP-N junction increases when it is exposed to a light of wavelength ≤621nm.\leq 621nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

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Answer: (A) 2eV2eV

Band gap =hcλ0=\dfrac{hc}{{\lambda }_{0}},
where λ0−{\lambda }_{0}- threshold wavelength
Band gap =1242ev−nm621nm=2eV=\dfrac{1242ev-nm}{621nm}=2eV

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