Physics · JEE Main, NEET

Semiconductors

209 practice questions with a worked solution for each. Tap an option to see instantly if you are right.

182MCQ27Numerical144With diagram
Start with question 1 See it move: Semiconductors, diodes and logic gates
  1. 1Which of the following logic gates provides output Y=0Y = 0 only when both inputs A=1A=1 and B=1B=1?JEE Main/MCQ/Medium
  2. 2In the given digital logic circuit network consisting of a NAND gate followed by a NOT gate, if inputs are A=1A=1 and B=1B=1, the final output YY will be:NEET/MCQ/Medium/With diagram
  3. 3In a forward biased P-N junction diode, the depletion layer width:JEE Main/MCQ/Medium
  4. 4In a common emitter NPN transistor amplifier, input resistance is 1 kΩ1\,\text{k}\Omega and load resistance is 10 kΩ10\,\text{k}\Omega. If β=50\beta=50, voltage gain is:JEE Main/MCQ/Medium
  5. 5A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is 1.42eV1.42 \mathrm{eV}. The wavelength of light emitted from the LED is :JEE Main/MCQ/Medium/Energy Bands in Solids
  6. 6The acceptor level of a p-type semiconductor is 6eV6 \mathrm{eV}. The maximum wavelength of light which can create a hole would be : Given hc=1242eVnm\mathrm{hc}=1242 \mathrm{eV} \mathrm{nm}.JEE Main/MCQ/Medium/Energy Bands in Solids
  7. 7Match the List I with List II List I List II A Intrinsic Semiconductor I Fermi-level near valence band B n-type semiconductor II Fermi-level at middle of valence and conduction band C p-type semiconductor III Fermi-level near conduction band D Metals IV Fermi-level inside conduction band Choose the correct answer from the options given below:JEE Main/MCQ/Medium/Energy Bands in Solids
  8. 8The effect of increase in temperature on the number of electrons in conduction band (ne)({n}_{e}) and resistance of a semiconductor will be as:JEE Main/MCQ/Medium/Energy Bands in Solids
  9. 9The energy band gap of semiconducting material to produce violet (wavelength =4000Å=4000Å) LED is _____ eVeV. (Round off to the nearest integer).JEE Main/Numerical/Medium/Energy Bands in Solids
  10. 10Consider a situation in which reverse biased current of a particular P−NP-N junction increases when it is exposed to a light of wavelength ≤621nm.\leq 621nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.JEE Main/MCQ/Medium/Energy Bands in Solids
  11. 11This question has Statement 1 and Statement 2. Of the four choices given after the Statements, choose the one that best describes the two Statements.
    Statement 1: A pure semiconductor has negative temperature coefficient of resistance.
    Statement 2: On raising the temperature, more charge carriers are released into the conduction band.    JEE Main/MCQ/Medium/Energy Bands in Solids
  12. 12If the lattice constant of this semiconductor is decreased, then which of the following is correct?
    JEE Main/MCQ/Medium/Energy Bands in Solids/With diagram
  13. 13The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm2480 \mathrm{~nm} is incident on it. The band gap in (eV) for the semiconductor isJEE Main/MCQ/Medium/Energy Bands in Solids
  14. 14The energy band gap is maximum inJEE Main/MCQ/Medium/Energy Bands in Solids
  15. 15Consider a n-type semiconductor in which ne\mathrm{n}_{\mathrm{e}} and nh\mathrm{n}_{\mathrm{h}} are number of electrons and holes, respectively.
    (A) Holes are minority carriers
    (B) The dopant is a pentavalent atom
    (C)     nenh≠ni2\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \neq \mathrm{n}_{\mathrm{i}}^2
    (where     nin_i is number of electrons or holes in semiconductor when it is intrinsic form)
    (D)     nenh≥ni2\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geq \mathrm{n}_{\mathrm{i}}^2
    (E) The holes are not generated due to the donors Choose the correct answer from the options given below :    JEE Main/MCQ/Medium/Semiconductors
  16. 16Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
    Assertion A: Diffusion current in a     p−np-n junction is greater than the drift current in magnitude if the junction is forward biased.
    Reason R: Diffusion current in a     p−np-n junction is form the nn-side to the pp-side if the junction is forward biased.
    In the light of the above statements, choose the most appropriate answer from the options given below.    JEE Main/MCQ/Medium/Semiconductors
  17. 17The resistivity (ρ)(\rho ) of semiconductor varies with temperature. Which of the following curve represents the correct behaviour?JEE Main/MCQ/Medium/Semiconductors
  18. 18Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
    Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
    In the light of above statements, choose the most appropriate answer from the options given below.    JEE Main/MCQ/Medium/Semiconductors
  19. 19Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.
    Statement II: The     n−n-type of semiconductor has a net negative charge.
    In the above statements, choose the most appropriate answer from the options given below:    JEE Main/MCQ/Medium/Semiconductors
  20. 20In a semiconductor, the number density of intrinsic charge carriers at 27∘C27^{\circ}C is 1.5×1016m−31.5\times {10}^{16}{m}^{-3}. If the semiconductor is doped with an impurity atom, the hole density increases to 4.5×1022m−34.5\times {10}^{22}{m}^{-3}. The electron density in the doped semiconductor is _______×109m−3\times {10}^{9}{m}^{-3}JEE Main/Numerical/Medium/Semiconductors
  21. 21For extrinsic semiconductors; when doping level is increased;JEE Main/MCQ/Medium/Semiconductors
  22. 22The conductivity of a semiconductor sample having electron concentration of 5×1018electronsm−35\times {10}^{18}electrons{m}^{-3}, hole concentration of 5×1019holesm−35\times {10}^{19}holes{m}^{-3}, electron mobility of 2.0m2V−1s−12.0{m}^{2}{V}^{-1}{s}^{-1} and hole mobility of 0.01m2V−1s−10.01{m}^{2}{V}^{-1}{s}^{-1} is

    (Take charge of an electron as     1.6×10−19C1.6\times {10}^{-19}C )    JEE Main/MCQ/Medium/Semiconductors
  23. 23The temperature dependence of resistance of CuCu and undoped SiSi in the temperature range 300−400K300-400K is best described byJEE Main/MCQ/Medium/Semiconductors
  24. 24Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate?JEE Main/MCQ/Medium/Semiconductors
  25. 25If the ratio of the concentration of electrons that of holes in a semiconductor is 75\frac{7}{5} and the ratio of currents is 74\frac{7}{4}, then what is the ratio of their drift velocities?JEE Main/MCQ/Medium/Semiconductors
  26. 26The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in theJEE Main/MCQ/Medium/Semiconductors
  27. 27At absolute zero, Si acts asJEE Main/MCQ/Medium/Semiconductors
  28. 28The maximum rated power of the LED is 22 mW and it is used in the circuit with input voltage of 55 V as shown in the figure below. The current through resistance RSR_S is 0.50.5 mA. The minimum value of the resistance of RSR_S, to ensure that the LED is not damaged is _______ kΩ\Omega.
    JEE Main/MCQ/Medium/Diodes/With diagram
  29. 29In a semiconductor p-n diode, the doping concentrations on p-side and n-side are 1015 atoms/cm310^{15}\text{ atoms/cm}^3 and 1018 atoms/cm310^{18}\text{ atoms/cm}^3, respectively. Which one of the following statements is true ?JEE Main/MCQ/Medium/Diodes
  30. 30A diode has Zener voltage of 1010 V and maximum power dissipation of 0.50.5 W, then the minimum resistance to be used in series with this diode for safety when it is connected to a 2525 V power supply is ______ Ω\Omega.JEE Main/Numerical/Medium/Diodes
  31. 31Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

    Assertion A: A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically.

    Reason R: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

    Choose the correct answer from the options given below    JEE Main/MCQ/Medium/Diodes
  32. 32For the given circuit (shown in part (A)) the time dependent input voltage vin(t)v_{in}(t) and corresponding output vo(t)v_o(t) are shown in part (B) and part (C), respectively. Identify the components that are used in the circuit between points X and Y.
    JEE Main/MCQ/Medium/Diodes/With diagram
  33. 33Assuming in forward bias condition there is a voltage drop of 0.7 V across a silicon diode, the current through diode D1D_{1} in the circuit is ____\_\_\_\_ mA.
    (Assume all diodes in the given circuit are identical)
    JEE Main/MCQ/Medium/Diodes/With diagram
  34. 34A voltage regulating circuit consisting of Zener diode, having break-down voltage of 10 V and maximum power dissipation of 0.4 W, is operated at 15 V. The approximate value of protective resistance in this circuit is ____\_\_\_\_ Ω\Omega.JEE Main/Numerical/Medium/Diodes
  35. 35The following diagram shows a Zener diode as a voltage regulator. The Zener diode is rated at Vz=5 VV_{z}=5 \mathrm{~V} and the desired current in load is 5 mA. The unregulated voltage source can supply upto 25 V. Considering the Zener diode can withstand four times of the load current, the value of resistor RSR_{S} (shown in circuit) should be ____\_\_\_\_ Ω\Omega. JEE Main/MCQ/Medium/Diodes/With diagram
  36. 36The output voltage in the following circuit is (Consider ideal diode case)
    JEE Main/MCQ/Medium/Diodes/With diagram
  37. 37In the following circuit, the reading of the ammeter will be (Take Zener breakdown voltage =4 V)=4 \mathrm{~V})
    JEE Main/MCQ/Medium/Diodes/With diagram
  38. 38A zener diode with 5 V zener voltage is used to regulate an unregulated dc voltage input of 25 V. For a 400Ω400 \Omega resistor connected in series, the zener current is found to be 4 times load current. The load current (IL)\left(I_L\right) and load resistance (RL)\left(R_{\mathrm{L}}\right) are :JEE Main/MCQ/Medium/Diodes
  39. 39

    In the circuit shown here, assuming threshold voltage of diode is negligibly small, then voltage     VABV_{A B} is correctly represented by :    JEE Main/MCQ/Medium/Diodes/With diagram
  40. 40Refer to the circuit diagram given in the figure. which of the following observations are correct?
    A. Total resistance of circuit is     6Ω6 \Omega
    B. Current in Ammeter is 1 A
    C. Potential across     ABA B is 4 Volts.
    D. Potential across CD is 4 Volts
    E. Total resistance of the circuit is     8Ω8 \Omega.

    Choose the correct answer from the options given below:
    JEE Main/MCQ/Medium/Diodes/With diagram
  41. 41Which of the following circuits represents a forward biased diode?


    Choose the correct answer from the options given below :    JEE Main/MCQ/Medium/Diodes/With diagram
  42. 42A potential divider circuit is connected with a dc source of 20 V20 \mathrm{~V}, a light emitting diode of glow in voltage 1.8 V1.8 \mathrm{~V} and a zener diode of breakdown voltage of 3.2 V3.2 \mathrm{~V}. The length (PR) of the resistive wire is 20 cm20 \mathrm{~cm}. The minimum length of PQ to just glow the LED is _____cm\mathrm{cm}
    JEE Main/Numerical/Medium/Diodes/With diagram
  43. 43Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode :JEE Main/MCQ/Medium/Diodes
  44. 44The value of net resistance of the network as shown in the given figure is :
    JEE Main/MCQ/Medium/Diodes/With diagram
  45. 45In the given circuit if the power rating of Zener diode is 10mW10mW, the value of series resistance Rs{R}_{s} to regulate the input unregulated supply is:JEE Main/MCQ/Medium/Diodes/With diagram
  46. 46In the given circuit, the voltage across load resistance (RL)({R}_{L}) is:JEE Main/MCQ/Medium/Diodes/With diagram
  47. 47A Zener diode of breakdown voltage 10V10V is used as a voltage regulator as shown in the figure. The current through the Zener diode isJEE Main/MCQ/Medium/Diodes/With diagram
  48. 48In the given circuit, the breakdown voltage of the Zener diode is 3.0V3.0V. What is the value of Iz{I}_{z} ?JEE Main/MCQ/Medium/Diodes/With diagram
  49. 49Which of the following circuits is reverse - biased ?JEE Main/MCQ/Medium/Diodes
  50. 50If each diode has a forward bias resistance of 25Ω25\Omega in the below circuit,

    Which of the following options is correct?    JEE Main/MCQ/Medium/Diodes/With diagram
  51. 51A zener diode of power rating 1.6W1.6W is to be used as voltage regulator. If the zener diode has a breakdown of 8V8V and it has to regulate voltage fluctuating between 3V3V and 10V10V The value of resistance Rs{R}_{s} for safe operation of diode will be
    JEE Main/MCQ/Medium/Diodes/With diagram
  52. 52Choose the correct statement about Zener diode:JEE Main/MCQ/Medium/Diodes
  53. 53A 8V8V Zener diode along with a series resistance RR is connected across a 20V20V supply (as shown in the figure). If the maximum Zener current is 25mA25mA, then the minimum value of RR will be _____ Ω\Omega.
    JEE Main/Numerical/Medium/Diodes/With diagram
  54. 54If the potential barrier across a p−np-n junction is 0.6V0.6V. Then the electric field intensity, in the depletion region having the width of 6×10−6m6\times {10}^{-6}m, will be _____ ×105NC−1\times {10}^{5}N{C}^{-1}JEE Main/Numerical/Medium/Diodes
  55. 55In the circuit shown below, maximum Zener diode current will be _____ mAmA.
    JEE Main/Numerical/Medium/Diodes/With diagram
  56. 56Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between AA and BB is _____ Ω.\Omega .
    JEE Main/Numerical/Medium/Diodes/With diagram
  57. 57A potential barrier of 0.4V0.4V exists across a p-n junction. An electron enters the junction from the nn-side with a speed of 6.0×105ms−16.0\times {10}^{5}{ms}^{-1}. The speed with which electron enters the pp side will be x3×105ms−1\dfrac{x}{3}\times {10}^{5}{ms}^{-1}, then the value of xx is _____.: (Given mass of electron =9×10−31kg=9\times {10}^{-31}kg, charge on electron =1.6×10−19C=1.6\times {10}^{-19}C.)JEE Main/Numerical/Medium/Diodes
  58. 58A Zener of breakdown voltage VZ=8V{V}_{Z}=8V and maximum Zener current, IZM=10mA{I}_{ZM}=10mA is subjected to an input voltage Vi=10V{V}_{i}=10V with series resistance R=100ΩR=100\Omega. In the given circuit RL{R}_{L} represents the variable load resistance. The ratio of maximum and minimum value of RL{R}_{L} is _____ .
    JEE Main/Numerical/Medium/Diodes/With diagram
  59. 59In the given circuit the input voltage Vin{V}_{in} is shown in figure. The cut-in voltage of p−np-n junction diode (D1{D}_{1} or D2{D}_{2}) is 0.6V0.6V. Which of the following output voltage (V0)\left({V}_{0}\right) waveform across the diode is correct?
    JEE Main/MCQ/Medium/Diodes/With diagram
  60. 60For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diodeJEE Main/MCQ/Medium/Diodes
  61. 61The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6V0.6V. The current through the resister of 40Ω40\Omega is _____ mAmA.
    JEE Main/Numerical/Medium/Diodes/With diagram
  62. 62As per the given circuit, the value of current through the battery will be _____ A.
    JEE Main/Numerical/Medium/Diodes/With diagram
  63. 63The I−VI-V characteristics of a p−np-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2V2V and 4V4V respective is
    JEE Main/MCQ/Medium/Diodes/With diagram
  64. 64In the given circuit, the value of current IL{I}_{L} will be _____ mA.mA. (When RL=1kΩ{R}_{L}=1k\Omega)
    JEE Main/Numerical/Medium/Diodes/With diagram
  65. 65In the given figure, each diode has a forward bias resistance of 30Ω30\Omega and infinite resistance in reverse bias. The current I1{I}_{1} will be :
    JEE Main/MCQ/Medium/Diodes/With diagram
  66. 66If VA{V}_{A} and VB{V}_{B} are the input voltages (either 5V5V or 0V0V) and V0{V}_{0} is the output voltage then the two gates represented in the following circuits (A)\left(A\right) and (B)\left(B\right) are :
    JEE Main/MCQ/Medium/Diodes/With diagram
  67. 67Choose the correct waveform that can represent the voltage across RR of the following circuit, assuming the diode is ideal one:
    JEE Main/MCQ/Medium/Diodes/With diagram
  68. 68A zener diode of power rating 2W2W is to be used as a voltage regulator. If the zener diode has a breakdown of 10V10V and it has to regulate voltage fluctuated between 6V6V and 14V14V, the value of Rs{R}_{s} for safe operation should be _____ Ω\Omega .
    JEE Main/Numerical/Medium/Diodes/With diagram
  69. 69A circuit is arranged as shown in figure. The output voltage Vo{V}_{o} is equal to __________ V.V.
    JEE Main/Numerical/Medium/Diodes/With diagram
  70. 70For the given circuit, the power across zener diode is _____ mWmW.
    JEE Main/Numerical/Medium/Diodes/With diagram
  71. 71In a given circuit diagram, a 5V5V zener diode along with a series resistance is connected across a 50V50V power supply. The minimum value of the resistance required, if the maximum zener current is 90mA90mA will be Ω.\text{Ω.}
    JEE Main/Numerical/Medium/Diodes/With diagram
  72. 72For the forward biased diode characteristics shown in the figure, the dynamic resistance at ID=3mA{I}_{D}=3mA will be ________Ω.\Omega .
    JEE Main/Numerical/Medium/Diodes/With diagram
  73. 73A zener diode having zener voltage 8V8V and power dissipation rating of 0.5W0.5W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance Rp{R}_{p} is _____Ω.\Omega .
    JEE Main/Numerical/Medium/Diodes/With diagram
  74. 74For the circuit shown below, calculate the value of Iz:{I}_{z}:
    JEE Main/MCQ/Medium/Diodes/With diagram
  75. 75The value of power dissipated across the zener diode (Vz=15V)\left({V}_{z}=15V\right) connected in the circuit as shown in the figure is x×10−1Wx\times {10}^{-1}W.

    The value of     xx to the nearest integer is _______.    JEE Main/Numerical/Medium/Diodes/With diagram
  76. 76The zener diode has a Vz=30V{V}_{z}=30V. The current passing through the diode for the following circuit is___mA.mA.
    JEE Main/Numerical/Medium/Diodes/With diagram
  77. 77The circuit contains two diodes each with a forward resistance of 50Ω50\Omega and with infinite reverse resistance. If the battery voltage is 6V6V, the current through the 120Ω120\Omega resistance is _______ mAmAJEE Main/Numerical/Medium/Diodes/With diagram
  78. 78A 5V5V battery is connected across the points XX and YY. Assume D1{D}_{1} and D2{D}_{2} to be normal silicon diodes. Find the current supplied by the battery if the +ve+ve terminal of the battery is connected to point XX.
    JEE Main/MCQ/Medium/Diodes/With diagram
  79. 79Given below are two statements:
    Statement I :     p−np-n junction diodes can be used to function as a transistor, simply by connecting two diodes, back to back, which acts as the base terminal
    Statement II: In the study of transistors, the amplification factor     β\beta indicates ratio of the collector current to the base current.
    In the light of the above statements, choose the correct answer from the options given below.    JEE Main/MCQ/Medium/Diodes
  80. 80Zener breakdown occurs in a p−np-n junction having ppand nn both:JEE Main/MCQ/Medium/Diodes
  81. 81In connection with the circuit drawn below, the value of current flowing through 2kΩ2k\Omega resistor is______×10−4A.\times {10}^{-4}A.
    JEE Main/Numerical/Medium/Diodes/With diagram
  82. 82Two Zener diodes (AA and BB) having breakdown voltages of 6V6V and 4V4V respectively, are connected as shown in the circuit below. The output voltage V0{V}_{0} variation with input voltage linearly increasing with time, is given by (Vinput=0Vatt=0{V}_{input}=0Vatt=0)JEE Main/MCQ/Medium/Diodes
  83. 83Take the breakdown voltage of the zener diode used in the given circuit as 6V6\text{V}. For the input voltage shown in the figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to the scale)
    JEE Main/MCQ/Medium/Diodes/With diagram
  84. 84When a diode is forward biased, it has a voltage drop of 0.5V0.5V . the safe limit of current through the diode is 10mA10mA. If a battery of emf 1.5V1.5V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is :JEE Main/MCQ/Medium/Diodes
  85. 85In the circuit shown below, is working as a 8Vdc8Vdc regulated voltage source. When 12V12V is used as an input, the power dissipated (in mWmW ) in each diode is (Considering both zener diodes are identical)

    JEE Main/Numerical/Medium/Diodes/With diagram
  86. 86The current ii in the network is

    JEE Main/MCQ/Medium/Diodes/With diagram
  87. 87Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. Built in potential in each diode is 0.7V0.7V. For the input voltages shown in the figure, the voltage (in Volts) at point A is ________
    JEE Main/Numerical/Medium/Diodes/With diagram
  88. 88Figure shows a DCDC voltage regulator circuit, with a Zener diode of breakdown voltage =6V=6V . If the unregulated input voltage varies between 10V10V to 16V,16V, then what is the maximum Zener current?
    JEE Main/MCQ/Medium/Diodes/With diagram
  89. 89The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener diode is 6V6V and the load resistance is, RL=4kΩ{R}_{L}=4k\Omega . The series resistance of the circuit is Ri=1kΩ{R}_{i}=1k\Omega . If the battery voltage VB{V}_{B} varies from 8V8V to 16V16V , what are the minimum and maximum values of the current through Zener diode?
    JEE Main/MCQ/Medium/Diodes/With diagram
  90. 90The reverse break down voltage of a Zener diode is 5.6V5.6V in the given circuit.

    The current     Iz{I}_{z} through the Zener is:    JEE Main/MCQ/Medium/Diodes/With diagram
  91. 91The circuit shown below contains two ideal diodes, each with a forward resistance of 50Ω50 \Omega. If the battery voltage is 6 V,6 \mathrm{~V}, the current through the 100Ω100 \Omega resistance (in Amperes) is:

    JEE Main/MCQ/Medium/Diodes/With diagram
  92. 92In the given circuit the current through Zener Diode is close to:

    JEE Main/MCQ/Medium/Diodes/With diagram
  93. 93For the circuit shown below, the current through the Zener diode is

    JEE Main/MCQ/Medium/Diodes/With diagram
  94. 94GeGe and SiSi diodes start conducting at 0.3V0.3V and 0.7V0.7V respectively. In the following figure if GeGe diode connection are reversed, the value of V0{V}_{0} changes by: (assume that the Ge diode has large breakdown voltage)

    JEE Main/MCQ/Medium/Diodes/With diagram
  95. 95In the given circuit the current through zener diode is:
    JEE Main/MCQ/Medium/Diodes/With diagram
  96. 96The reading of the ammeter for a silicon diode in the given circuit is:

    JEE Main/MCQ/Medium/Diodes/With diagram
  97. 97The V−IV-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:

    JEE Main/MCQ/Medium/Diodes/With diagram
  98. 98A Zener diode with a breakdown voltage of 4V4V is connected in series with a resistance RR to a battery of emf 10V10V. The maximum power dissipation rating for the Zener diode is 1W1W. The value of RR to ensure maximum power dissipation across the diode isJEE Main/MCQ/Medium/Diodes
  99. 99Identify the semiconductor devices whose characteristics are given below, in the order (a),(b),(c),(d)\left(a\right),\left(b\right),\left(c\right),\left(d\right):


    JEE Main/MCQ/Medium/Diodes/With diagram
  100. 100A 2V2V battery is connected across ABAB as shown in the figure. The value of the current supplied by the battery when in first case battery's positive terminal is connected to AA and in second case when positive terminal of battery is connected to BB will respectively be:
    JEE Main/MCQ/Medium/Diodes/With diagram
  101. 101The value of the resistor, RS{R}_{S}, needed in the DC voltage regulator circuit shown here, equals:
    JEE Main/MCQ/Medium/Diodes/With diagram
  102. 102In an unbiased p - n junction electrons diffuse from n-region to p-region because:JEE Main/MCQ/Medium/Diodes
  103. 103A Zener diode is connected to a battery and a load as show below:


    The currents,     I,IZ\mathrm{I}, \mathrm{I}_{\mathrm{Z}} and IL\mathrm{I}_{\mathrm{L}} are respectively.    JEE Main/MCQ/Medium/Diodes/With diagram
  104. 104The forward biased diode connection is :JEE Main/MCQ/Medium/Diodes
  105. 105Figure shows a circuit in which three identical diodes are used. Each diode has forward resistance of 20Ω20 \Omega and infinite backward resistance. Resistors R1=R2=R3=50Ω\mathrm{R}_1=\mathrm{R}_2=\mathrm{R}_3=50 \Omega. Battery voltage is 6 V6 \mathrm{~V}. The current through R3\mathrm{R}_3 is :
    JEE Main/MCQ/Medium/Diodes/With diagram
  106. 106The I−V\text{I}-\text{V} characteristics of an LED\text{LED} is:JEE Main/MCQ/Medium/Diodes
  107. 107A diode detector is used to detect an amplitude modulated wave of 60% modulation by using a condenser of capacity 250 pico farad in parallel with a load resistance of 100 kilo ohm. Find the maximum modulated frequency which could be detected by it.JEE Main/MCQ/Medium/Diodes
  108. 108If in a p−n\mathrm{p-n} junction diode, a square input signal of 10 V10 \mathrm{~V} is applied as shown



    Then the output signal across     RLR_{\mathrm{L}} will be    JEE Main/MCQ/Medium/Diodes/With diagram
  109. 109The circuit has two oppositely connect ideal diodes in parallel. What is the current following in the circuit?
    JEE Main/MCQ/Medium/Diodes/With diagram
  110. 110In the following, which one of the diodes is reverse biased?JEE Main/MCQ/Medium/Diodes
  111. 111When p-n junction diode is forward biasedJEE Main/MCQ/Medium/Diodes
  112. 112In the middle of the depletion layer of a reverse biased p-n junction, theJEE Main/MCQ/Medium/Diodes
  113. 113Two p-n junction diodes D1D_{1} and D2D_{2} are connected as shown in figure. AA and BB are input signals and CC is the output. The given circuit will function as a ____\_\_\_\_.
    JEE Main/MCQ/Medium/Logic Gates/With diagram
  114. 114Statement I : To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load RL.{R}_{L}.
    Statement II : To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect an inductor in series with     RL.{R}_{L}.
    In the light of the above statements, choose the most appropriate answer from the options given below :    JEE Main/MCQ/Medium/Rectifier
  115. 115A p-n junction (D) shown in the figure can act as a rectifier. An alternating current source (V)(V) is connected in the circuit.
    JEE Main/MCQ/Medium/Rectifier/With diagram
  116. 116In a full wave rectifier circuit operating from 50 Hz50 \mathrm{~Hz} mains frequency, the fundamental frequency in the ripple would beJEE Main/MCQ/Medium/Rectifier
  117. 117Consider the following statements:
    A. The junction area of solar cell is made very narrow compared to a photo diode.
    B. Solar cells are not connected with any external bias.
    C. LED is made of lightly doped p-n junction.
    D. Increase of forward current results in continuous increase of LED light intensity.
    E. LEDs have to be connected in forward bias for emission of light.
    Choose the correct answer from the options given below:    JEE Main/MCQ/Medium/Special purpose diodes
  118. 118The I−VI-V characteristics of an electronic device shown in the figure. The device is:
    JEE Main/MCQ/Medium/Special purpose diodes/With diagram
  119. 119Conductivity of a photodiode starts changing only if the wavelength of incident light is less than 660nm.660nm. The band gap of photodiode is found to be (X8)eV.\left(\dfrac{X}{8}\right)eV. The value of XX is:
    (Given     h=6.6×10−34Js,e=1.6×10−19Ch=6.6\times {10}^{-34}Js,e=1.6\times {10}^{-19}C)    JEE Main/MCQ/Medium/Special purpose diodes
  120. 120Which of the following statement is not correct in the case of light emitting diodes?
    A. It is a heavily doped p-n junction.
    B. It emits light only when it is forward biased.
    C. It emits light only when it is reverse biased.
    D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
    Choose the correct answer from the options given below :    JEE Main/MCQ/Medium/Special purpose diodes
  121. 121Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
    Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.
    Reason R: For a     p−np-n junction diode, at applied voltage VV the current in the forward bias is more than the current in the reverse bias for ∣Vz∣>±V≥∣V0∣\left|{V}_{z}\right|\gt \pm V\geq \left|{V}_{0}\right| where V0{V}_{0} is the threshold voltage and Vz{V}_{z} is the breakdown voltage.
    In the light of the above statements, choose the correct answer from the options given below    JEE Main/MCQ/Medium/Special purpose diodes
  122. 122Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
    Assertion A: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
    Reason R: The current in the forward bias is more than the current in the reverse bias for a     p−np-n junction diode.

    In the light of the above statement, choose the correct answer from the options given below :    JEE Main/MCQ/Medium/Special purpose diodes
  123. 123Identify the solar cell characteristics from the following options :JEE Main/MCQ/Medium/Special purpose diodes
  124. 124The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode becauseJEE Main/MCQ/Medium/Special purpose diodes
  125. 125LED is constructed from Ga−As−PGa-As-P semiconducting material. The energy gap of this LED is 1.9eV1.9eV. Calculate the wavelength of light emitted and its colour. h=6.63×10−34J−sh=6.63\times {10}^{-34}J-s and c=3×108ms−1c=3\times {10}^{8}m{s}^{-1}JEE Main/MCQ/Medium/Special purpose diodes
  126. 126With increasing biasing voltage of a photo diode, the photocurrent magnitude:JEE Main/MCQ/Medium/Special purpose diodes
  127. 127If a semiconductor photo diode can detect a photon with a maximum wavelength of 400nm400nm, then its band gap energy is: Planck's constant h=6.63×10−34J.sh=6.63\times {10}^{-34}J.s
    Speed of light     c=3×108ms−1c=3\times {10}^{8}m{s}^{-1}    JEE Main/MCQ/Medium/Special purpose diodes
  128. 128The output YY for the given inputs AA and BB to the circuit is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  129. 129Refer to the logic circuit given below. For two inputs (A=1,B=1)(A=1, B=1) and (A=0,B=1)(A=0, B=1), output (Y)(Y) will be __________.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  130. 130For the given logic circuit, which of the following inputs combination will make both LED−1-1 and LED−2-2 to glow?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  131. 131Two 44 bits binary numbers, A=1101A = 1101 and B=1010B = 1010 are given in the inputs of a logic circuit shown in figure below. The output (Y)(Y) will be:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  132. 132If XX and YY are the inputs, the given circuit works as _______.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  133. 133Identify the correct truth table of the given logic circuit.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  134. 134For the given logic gate circuit, which of the following is the correct truth table?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  135. 135The correct truth table for the given input data of the following logic gate is :
    Inputs
    JEE Main/MCQ/Medium/Logic gates/With diagram
  136. 136Find the correct combination of A,B,C\mathrm{A}, \mathrm{B}, \mathrm{C} and D inputs which can cause the LED to glow.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  137. 137The given circuit works as :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  138. 138Consider the following logic circuit.

    The output is     Y=0\mathrm{Y}=0 when :    JEE Main/MCQ/Medium/Logic gates/With diagram
  139. 139The Boolean expression Y=AB‾C+A‾C‾\mathrm{Y}=\mathrm{A} \overline{\mathrm{B}} \mathrm{C}+\overline{\mathrm{A}} \overline{\mathrm{C}} can be realised with which of the following gate configurations.
    A. One 3-input AND gate, 3 NOT gates and one 2input OR gate, One 2-input AND gate,
    B. One 3-input AND gate, 1 NOT gate, One 2input NOR gate and one 2-input OR gate
    C. 3-input OR gate, 3 NOT gates and one 2-input AND gate
    Choose the correct answer from the options given below    JEE Main/MCQ/Medium/Logic gates
  140. 140The truth table corresponding to the circuit given below is
    JEE Main/MCQ/Medium/Logic gates/With diagram
  141. 141Choose the correct logic circuit for the given truth table having inputs A and B.
    InputsOutputABY000010101111\begin{array}{|c|c|c|} \hline \text{Inputs} & & \text{Output} \\ \hline A & B & Y \\ \hline 0 & 0 & 0 \\ \hline 0 & 1 & 0 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array}    JEE Main/MCQ/Medium/Logic gates
  142. 142In the digital circuit shown in the figure, for the given inputs the P and Q values are :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  143. 143The truth table for the circuit given below is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  144. 144

    For the circuit shown above, equivalent GATE is :    JEE Main/MCQ/Medium/Logic gates/With diagram
  145. 145Which of the following circuits has the same outpur as that of the given circuit?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  146. 146The output of the circuit is low (zero) for :


    (A)     X=0,Y=0\mathrm{X}=0, \mathrm{Y}=0
    (B)     X=0,Y=1X=0, Y=1
    (C)     X=1,Y=0X=1, Y=0
    (D)     X=1,Y=1\mathrm{X}=1, \mathrm{Y}=1

    Choose the correct answer from the options given below :    JEE Main/MCQ/Medium/Logic gates/With diagram
  147. 147

    \begin{array}{c|c|c} A & B & Y \\\hline 0 & 0 & 1 \\0 & 1 & 1 \\1 & 0 & 0 \\1 & 1 & 1\end{array}

    To obtain the given truth table, following logic gate should be placed at G:    JEE Main/MCQ/Medium/Logic gates/With diagram
  148. 148
    In the truth table of the above circuit the value of     X\mathrm{X} and Y\mathrm{Y} are :    JEE Main/MCQ/Medium/Logic gates/With diagram
  149. 149The output Y\mathrm{Y} of following circuit for given inputs is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  150. 150The correct truth table for the following logic circuit is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  151. 151The output (Y)(Y) of logic circuit given below is 0 only when :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  152. 152Following gates section is connected in a complete suitable circuit.

     For which of the following combination, bulb will glow (ON) : \text { For which of the following combination, bulb will glow (ON) : }    JEE Main/MCQ/Medium/Logic gates/With diagram
  153. 153Identify the logic gate given in the circuit:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  154. 154The output of the given circuit diagram isJEE Main/MCQ/Medium/Logic gates/With diagram
  155. 155Identify the logic operation performed by the given circuit.JEE Main/MCQ/Medium/Logic gates/With diagram
  156. 156The truth table for this given circuit is:JEE Main/MCQ/Medium/Logic gates/With diagram
  157. 157The truth table of the given circuit diagram is :JEE Main/MCQ/Medium/Logic gates/With diagram
  158. 158The output from a NAND gate having inputs A and B given below will be,
    JEE Main/MCQ/Medium/Logic gates/With diagram
  159. 159For the following circuit and given inputs AA and B,B, choose the correct option for output ‘Y’‘Y’

    JEE Main/MCQ/Medium/Logic gates/With diagram
  160. 160The logic operations performed by the given digital circuit is equivalent to:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  161. 161The logic performed by the circuit shown in figure is equivalent to
    JEE Main/MCQ/Medium/Logic gates/With diagram
  162. 162For the logic circuit shown, the output waveform at YY is
    JEE Main/MCQ/Medium/Logic gates/With diagram
  163. 163Name the logic gate equivalent to the diagram attached
    JEE Main/MCQ/Medium/Logic gates/With diagram
  164. 164The output YY for the inputs AA and BB of circuit is given by

    Truth table of the shown circuit is :    JEE Main/MCQ/Medium/Logic gates/With diagram
  165. 165The output waveform of the given logical circuit for the following inputs AA and BB as shown below, is
    JEE Main/MCQ/Medium/Logic gates/With diagram
  166. 166For the given logic gates combination, the correct truth table will be
    JEE Main/MCQ/Medium/Logic gates/With diagram
  167. 167The logic gate equivalent to the given circuit diagram is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  168. 168A logic gate circuit has two inputs AA and BB and output YY. The voltage waveforms of A,BA,B and YY are shown below

    The logic gate circuit is    JEE Main/MCQ/Medium/Logic gates/With diagram
  169. 169In the circuit, the logical value of A=1A=1 or B=1B=1 when potential at AA or BB is 5V5V and the logical value of A=0A=0 or B=0B=0 when potential at AA or BB is 0V0V.

    The truth table of the given circuit will be :    JEE Main/MCQ/Medium/Logic gates/With diagram
  170. 170Identify the correct Logic Gate for the following output (Y)\left(Y\right) of two inputs AA and BB.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  171. 171Identify the logic operation performed by the given circuit
    JEE Main/MCQ/Medium/Logic gates/With diagram
  172. 172In the following logic circuit the sequence of the inputs A,BA,B are (0,0),(0,1),(1,0)(0,0),(0,1),(1,0) and (1,1).(1,1). The output YY for this sequence will be :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  173. 173Four NOR gates are connected as shown in figure. The truth table for the given figure is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  174. 174Identify the logic operation carried out by the given circuit:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  175. 175Find the truth table for the function YY of AA and BB represented in the following figure.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  176. 176Identify the logic operation carried out.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  177. 177Which one of the following will be the output of the given circuit?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  178. 178The output of the given combination gates represents:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  179. 179The following logic gate is equivalent to :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  180. 180In the logic circuit shown in the figure, if input AA and BB are 00 to 11 respectively, the output at YY would be xx. The value of xx is _________.
    JEE Main/Numerical/Medium/Logic gates/With diagram
  181. 181Draw the output signal YY in the given combination of gates.
    JEE Main/MCQ/Medium/Logic gates/With diagram
  182. 182The truth table for the following logic circuit is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  183. 183
    The logic circuit shown above is equivalent to :    JEE Main/MCQ/Medium/Logic gates/With diagram
  184. 184Identify the correct output signal YY in the given combination of gates (as shown nn) for the given inputs AandBAandB

    JEE Main/MCQ/Medium/Logic gates/With diagram
  185. 185Identify the operation performed by the circuit given below :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  186. 186In the following, digital circuit, what will be the output a 'ZZ', when the input (A,B)\left(A,B\right) are (1,0),(0,0),(1,1),(0,1)\left(1,0\right),\left(0,0\right),\left(1,1\right),\left(0,1\right)
    JEE Main/MCQ/Medium/Logic gates/With diagram
  187. 187In the given circuit, value of YY is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  188. 188Boolean relation at the output stage- YY for the following circuit is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  189. 189Which of the following gives a reversible operation?JEE Main/MCQ/Medium/Logic gates
  190. 190The truth table for the circuit given in the figure is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  191. 191The logic gate equivalent to the given logic circuit is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  192. 192The output of the given logic circuit is:

    JEE Main/MCQ/Medium/Logic gates/With diagram
  193. 193To get output '1' at R,R, for the given logic gate circuit the input values must be:

    JEE Main/MCQ/Medium/Logic gates/With diagram
  194. 194Truth table for the given circuit will be
    JEE Main/MCQ/Medium/Logic gates/With diagram
  195. 195To get an output of 11 from the circuit shown in the figure the input must be:

    JEE Main/MCQ/Medium/Logic gates/With diagram
  196. 196The truth table given in fig. represents: A B Y 0 0 0 0 1 1 1 0 1 1 1 1JEE Main/MCQ/Medium/Logic gates
  197. 197If a, b, c, d are inputs to a gate and xx is its output, then, as per the following time graph, the gate is:
    JEE Main/MCQ/Medium/Logic gates/With diagram
  198. 198

    Given,     AA and BB are input terminals
    Logic     11 is>5V\gt 5V
    Logic     00 is<1V\lt 1V
    Which logic gate operation, the following circuit does?
    Note: This question was awarded a bonus.     CC option changed.    JEE Main/MCQ/Medium/Logic gates/With diagram
  199. 199Identify the gate and match A,B,YA,B,Y in the bracket to check.

    JEE Main/MCQ/Medium/Logic gates/With diagram
  200. 200Which of the following circuits correctly represents the following truth table ?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  201. 201A system of four gates is set up as shown. The 'truth table' corresponding to this system is :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  202. 202Consider two npn transistors as shown in figure. If 0 Volts corresponds to false and 5 Volts correspond to true then the output at C corresponds to :
    JEE Main/MCQ/Medium/Logic gates/With diagram
  203. 203The figure shows a combination of two NOT gates and a NOR gate.


    The combination is equivalent to     a\mathrm{a}    JEE Main/MCQ/Medium/Logic gates/With diagram
  204. 204Which one of the following is the Boolean expression for NOR gate?JEE Main/MCQ/Medium/Logic gates
  205. 205Which logic gate with inputs A\mathrm{A} and B\mathrm{B} performs the same operation as that performed by the following circuit?
    JEE Main/MCQ/Medium/Logic gates/With diagram
  206. 206Truth table for system of four NAND gates as shown in figure is
    JEE Main/MCQ/Medium/Logic gates/With diagram
  207. 207The combination of gates shown below yields
    JEE Main/MCQ/Medium/Logic gates/With diagram
  208. 208The logic circuit shown below has the input waveforms 'A' and 'B' as shown. Pick out the correct output waveform.

    JEE Main/MCQ/Medium/Logic gates/With diagram
  209. 209In the circuit below, AA and BB represent two inputs and CC represents the output. The circuit represents
    JEE Main/MCQ/Medium/Logic gates/With diagram

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